The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Feb. 22, 2023
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Hiroaki Ikeuchi, Yokohama Kanagawa, JP;
Keiichi Yamaguchi, Kawasaki Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/18 (2006.01); H01G 4/12 (2006.01); H01G 4/33 (2006.01); H01L 23/66 (2006.01); H05K 1/02 (2006.01); H05K 1/11 (2006.01);
U.S. Cl.
CPC ...
H05K 1/0243 (2013.01); H01G 4/12 (2013.01); H01G 4/33 (2013.01); H01L 23/66 (2013.01); H05K 1/111 (2013.01); H05K 1/181 (2013.01);
Abstract
According to one embodiment, a circuit element includes a silicon substrate, a lower electrode, a dielectric film, and an upper electrode. The lower electrode is formed on a major surface of the silicon substrate by a doping process. The dielectric film is formed on the lower electrode. The upper electrode is formed on the dielectric film. The upper electrode includes a slit.