The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jun. 26, 2023
Efficient Power Conversion Corporation, El Segundo, CA (US);
Ravi Ananth, Laguna Niguel, CA (US);
Edward Lee, Fullerton, CA (US);
Michael Chapman, Long Beach, CA (US);
Efficient Power Conversion Corporation, El Segundo, CA (US);
Abstract
A single-ended or differential level-shifting interface for GaN ICs that allows GaN ICs to be controlled with standard low-voltage CMOS level inputs. The logic level shift circuit is based on a resistive network is therefore insensitive to process and temperature variations, making it particularly well suited for implementation in a GaN IC. The resistive network for a single-ended input signal includes a first branch with a voltage divider connected to the input signal. The voltage divider of the first branch provides a level shifted and scaled input signal to the first input of a comparator at the optimal bias point of the comparator. The resistive network also includes a second voltage divider branch with hysteresis for providing a trip voltage to the second input to the comparator, also at the optimal bias point of the comparator. The comparator outputs complementary bipolar level shifted signals corresponding to the input signal.