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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12431479 B1

PDFFull Text
Date of Patent:
Sep. 30, 2025

Filed:

Mar. 24, 2023

Method of manufacturing semiconductor package

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jakyoung Gu, Suwon-si, KR;

Minsoo Kim, Suwon-si, KR;

Jihye Shim, Suwon-si, KR;

Kyoungok Jung, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Joseph C Nicely

Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/4757 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 25/10 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 25/50 (2013.01); H01L 21/0274 (2013.01); H01L 21/0275 (2013.01); H01L 21/0332 (2013.01); H01L 21/31058 (2013.01); H01L 21/311 (2013.01); H01L 21/31127 (2013.01); H01L 21/31133 (2013.01); H01L 21/31144 (2013.01); H01L 21/47573 (2013.01); H01L 21/4846 (2013.01); H01L 21/4857 (2013.01); H01L 23/498 (2013.01); H01L 23/49811 (2013.01); H01L 23/49838 (2013.01); H01L 25/105 (2013.01); H01L 25/0657 (2013.01); H01L 2225/06548 (2013.01);
Abstract

A method of manufacturing a semiconductor package includes forming a plurality of conductive patterns on a substrate, forming a photoresist film over the substrate to cover the plurality of conductive patterns, forming a photoresist pattern from the photoresist film by a photolithography process using a photomask that includes a transparent area, a light-shielding area, and a semi-transparent area transmitting only a portion of light incident thereon, wherein the photoresist pattern includes a via hole, which exposes one conductive pattern, and a recessed portion, which has a lower surface exposing a portion of the photoresist pattern, forming a conductive post in the via hole, and removing the photoresist pattern by using a photoresist stripping composition.

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