The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jan. 10, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Donggeon Gu, Hwaseong-si, KR;
Won-Jun Lee, Seoul, KR;
Changyup Park, Hwaseong-si, KR;
Dongho Ahn, Hwaseong-si, KR;
Yewon Kim, Seoul, KR;
Kwonyoung Kim, Seoul, KR;
Okhyeon Kim, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Industry Academy Cooperation Foundation Of Sejong University, Seoul, KR;
Abstract
A method of forming a germanium antimony tellurium (GeSbTe) layer includes forming a germanium antimony (GeSb) layer by repeatedly performing a GeSb supercycle; and forming the GeSbTe layer by performing a tellurization operation on the GeSb layer, wherein the GeSb supercycle includes performing at least one GeSb cycle; and performing at least one Sb cycle, the GeSbTe has a composition of GeSbTe, in which a and b satisfy the following relations: −0.2<a<0.2 and −0.5<b<0.5.