The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jun. 03, 2020
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Douglas Walter Agnew, Portland, OR (US);
Joseph R. Abel, West Linn, OR (US);
Ian John Curtin, Portland, OR (US);
Purushottam Kumar, Hillsboro, OR (US);
Awnish Gupta, Hillsboro, OR (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/401 (2013.01); C23C 16/4554 (2013.01); C23C 16/45542 (2013.01); H01J 37/3244 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01J 2237/332 (2013.01);
Abstract
Methods of providing control of film properties during atomic layer deposition using intermittent plasma treatment in-situ are provided herein. Methods include modulating gas flow rate ratios used to generate plasma during intermittent plasma treatment, toggling plasma power, and modulating chamber pressure.