The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Feb. 15, 2024
Texas Instruments Incorporated, Dallas, TX (US);
Robert Allan Neidorff, Bedford, NH (US);
Henry Litzmann Edwards, Garland, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A system for determining the leakage current of a field effect transistor over temperature includes a metal oxide semiconductor field effect transistor (MOSFET) having first and second current terminals and a control terminal, wherein the first current terminal is coupled to a current measurement device. A switch is coupled to the control terminal and to a voltage source. The switch is configured to apply a voltage between a control terminal and a current terminal of the (MOSFET) responsive to a first signal, and apply approximately zero volts to the control terminal of the (MOSFET) responsive to a second signal.