The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Jul. 12, 2023
Applicants:

Imec Vzw, Leuven, BE;

Katholieke Universiteit Leuven, Leuven, BE;

Inventors:

Yuanyuan Shi, Leuven, BE;

Pierre Morin, Woluwe-Saint-Pierre, BE;

Benjamin Groven, Kortessem, BE;

Vladislav Voronenkov, Leuven, BE;

Assignees:

IMEC VZW, Leuven, BE;

Katholieke Universiteit Leuven, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/04 (2006.01); C30B 29/46 (2006.01);
U.S. Cl.
CPC ...
C30B 25/04 (2013.01); C30B 29/46 (2013.01);
Abstract

In one aspect, a template for growing a crystal of a two-dimensional material can include a flat surface for growing the crystal thereon, a first wall on the flat surface, and a second wall on the flat surface. The first and the second walls can meet at a corner to form an angle having an opening that is adapted to align with the crystal structure of the crystal with a tolerance of up to 5°. Each of the first and second walls can have a length of from 5 nm to 1000 nm and a height of from 0.6 nm to 2 nm.


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