The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2025

Filed:

Dec. 16, 2021
Applicant:

Longi Green Energy Technology Co., Ltd., Shaanxi, CN;

Inventors:

Zhanjun Xu, Shaanxi, CN;

Rui Zhou, Shaanxi, CN;

Qiao Li, Shaanxi, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/16 (2006.01); C30B 15/26 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/26 (2013.01); C30B 15/16 (2013.01); C30B 29/06 (2013.01);
Abstract

A crystal-growth controlling method and device, and a crystal growing apparatus, used for, in the process of growing a crystal by a pulling method, forming the crystal of the shape required by the cell side. The method includes: in a process of growing a crystal by the pulling method, acquiring a growth image of the crystal in real time, and extracting shape information of the crystal at a growth interface from the growth image, wherein the growth interface is where the crystal intersects with a raw-material melt liquid level; comparing the shape information of the crystal at the growth interface with shape information of the predetermined shape, to obtain a comparison result; and based on the comparison result, adjusting a shape of the crystal at the growth interface by using a laser.


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Xu, Zhanjun. (2025). Crystal growth control method and apparatus, and crystal growth device (U.S. Patent No. 12428748). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12428748

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