The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Dec. 17, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ning Li, White Plains, NY (US);
Fabio Carta, Pleasantville, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Tze-Chiang Chen, Yorktown Heights, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/235 (2023.02); H10B 63/20 (2023.02); H10N 70/011 (2023.02); H10N 70/841 (2023.02);
Abstract
A cross-point memory semiconductor structure and a method of creating the same are provided. There is a first electrode layer on top of the substrate. A conductive oxide diffusion barrier layer is on top of the first electrode. A polycrystalline silicon diode is on top of the conductive oxide diffusion barrier. A phase change material (PCM) layer is on top of the polycrystalline silicon diode. A second electrode is on top of the PCM layer.