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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12426493 B1

PDFFull Text
Date of Patent:
Sep. 23, 2025

Filed:

Sep. 13, 2022

Structure of the photodiode

Applicant:

Raynergy Tek Incorporation, Hsinchu, TW;

Inventors:

Yi-Ming Chang, Hsinchu, TW;

Kuen-Wei Tsai, Hsinchu, TW;

Assignee:

RAYNERGY TEK INCORPORATION, Hsinchu, TW;

Attorney:

WPAT, PC

Primary Examiner:

Daniel P Shook

Int. Cl.
CPC ...
H10K 85/10 (2023.01); H10K 30/20 (2023.01); H10K 30/30 (2023.01); H10K 30/82 (2023.01); H10K 85/60 (2023.01); H10K 39/32 (2023.01);
U.S. Cl.
CPC ...
H10K 85/113 (2023.02); H10K 85/151 (2023.02); H10K 85/657 (2023.02); H10K 30/20 (2023.02); H10K 30/30 (2023.02); H10K 30/82 (2023.02); H10K 39/32 (2023.02);
Abstract

The present invention is a structure of a photodiode, which comprises a substrate; a first electrode is arranged on the substrate; a first transport layer is arranged on the first electrode; a photoactive layer is arranged on the first transport layer, the photoactive layer includes a P-type semiconductor layer and an N-type semiconductor layer. The P-type semiconductor layer and the N-type semiconductor layer have a composition ratio between 1:0.5 and 1:1.5. The photoactive layer has a thickness ranging from 1 μm to 15 m, the photoactive layer has a first energy gap value, and a second electrode is disposed on the photoactive layer.

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