The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

May. 07, 2021
Applicants:

Beijing Boe Technology Development Co., Ltd., Beijing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventor:

Aidi Zhang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H10D 86/01 (2025.01); H10K 59/131 (2023.01); H10K 71/00 (2023.01); H10K 71/20 (2023.01); H10K 71/40 (2023.01); H10K 85/50 (2023.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H10K 71/20 (2023.02); H10D 86/0212 (2025.01); H10K 59/131 (2023.02); H10K 71/00 (2023.02); H10K 71/40 (2023.02); H10K 85/50 (2023.02); H10K 59/1201 (2023.02);
Abstract

A method for manufacturing an array substrate includes: forming a patterned film layer on a side of a substrate, wherein the patterned film layer is provided with a plurality of grooves; forming a first precursor structure in the groove, wherein a material of the first precursor structure includes a first precursor; and disposing, in an environment of a gaseous second precursor, the substrate on which the first precursor structure is formed, such that the gaseous second precursor is reacted with the first precursor structure to form a perovskite crystal structure; wherein one of the first precursor and the gaseous second precursor includes a metal halide, and the other of the first precursor and the gaseous second precursor includes one of a formamidine halide, a methyl-amine halide, a cesium halide, and a hydrogen sulfide.


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