The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Mar. 15, 2021
Applicant:

Plessey Semiconductors Ltd, Plymouth Devon, GB;

Inventors:

Andrea Pinos, Plymouth Devon, GB;

Jun-Youn Kim, Plymouth Devon, GB;

Samir Mezouari, Plymouth Devon, GB;

Weisin Tan, Plymouth Devon, GB;

Assignee:

Plessey Semiconductors Ltd, Plymouth Devon, GB;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 29/14 (2025.01);
U.S. Cl.
CPC ...
H10H 29/142 (2025.01);
Abstract

A light emitting diode structure comprising: a p-type region; an n-type region; a light emitting region for recombination of carriers injectable by the p-type region and the n-type region; and a via passing through the light emitting region, wherein the via defines the perimeter of a light emitting surface of at least one pixel and comprises a material configured to enable injection of carriers into the p-type region or the n-type region, wherein one of the p-type region and n-type region is configured such that carriers generated in the one of the p-type region and the n-type region diffuses through the other one of the n-type region and the p-type region prior to recombination in the light emitting region.


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