The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Nov. 03, 2020
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Michael Binder, Barbing, DE;
Andreas Rückerl, Konzell, DE;
Roland Zeisel, Tegernheim, DE;
Tobias Meyer, Kelheim, DE;
Kerstin Neveling, Pentling, DE;
Christine Rafael, Donaustauf, DE;
Moses Richter, Regensburg, DE;
Rainer Hartmann, Regensburg, DE;
Clemens Vierheilig, Tegernheim, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Abstract
In an embodiment, an optoelectronic semiconductor component includes a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction, two electrodes for electrical contact between the first and second layers and a cover layer located on the side surface in a region of the first layer, wherein the cover layer is in direct contact with the first layer, wherein a material of the cover layer alone and its direct contact with the first layer are configured to cause a formation of a depletion zone in the first layer, wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer, wherein the cover layer comprises a metal or a metal compound, and wherein the cover layer forms a Schottky contact with the first layer.