The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Feb. 10, 2020
King Abdullah University of Science and Technology, Thuwal, SA;
Iman Salem Roqan, Thuwal, SA;
Dhaifallah Rahim Almalawi, Thuwal, SA;
KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY, Thuwal, SA;
Abstract
There is a method for forming a semiconductor nanostructure on a substrate. The method includes placing a substrate and a semiconductor material in a pulsed laser deposition chamber; selecting parameters including a fluence of a laser beam, a pressure P inside the chamber, a temperature T of the substrate, a distance d between the semiconductor material and the substrate, and a gas molecule diameter aof a gas to be placed inside the chamber so that conditions for a Stranski-Krastanov nucleation are created; and applying the laser beam with the selected fluence to the semiconductor material to form a plume of the semiconductor material. The selected parameters determine the formation, from the plume, of (1) a nanolayer that covers the substrate, (2) a polycrystalline wetting layer over the nanolayer, and (3) a single-crystal nanofeature over the polycrystalline wetting layer, and the single-crystal nanofeature is grown free of any catalyst or seeding layer.