The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Jan. 31, 2023
Applicant:

Magnolia White Corporation, Tokyo, JP;

Inventors:

Tadayoshi Katsuta, Tokyo, JP;

Yoshitaka Ozeki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 30/223 (2025.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01); G06V 40/13 (2022.01);
U.S. Cl.
CPC ...
H10F 30/223 (2025.01); H10F 39/18 (2025.01); H10F 39/8057 (2025.01); G06V 40/1318 (2022.01);
Abstract

According to an aspect, a detection device includes a substrate and a plurality of photodiodes arranged on the substrate. Each of the photodiodes comprises a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer stacked on the substrate. Each of the photodiodes includes a plurality of first regions in each of which the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer are stacked so as to be directly in contact with one another, and a second region in which at least the p-type semiconductor layer and the i-type semiconductor layer are stacked so as to be separate from each other. Adjacent first regions included in the plurality of first regions are coupled together by at least the p-type semiconductor layer.


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