The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Mar. 14, 2024
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Inventor:
Mizuki Sato, Kanagawa, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/131 (2023.01); G02F 1/1362 (2006.01); H01L 27/12 (2006.01); H01L 27/15 (2006.01); H01L 29/786 (2006.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10H 29/14 (2025.01); H10K 59/121 (2023.01); H10K 59/124 (2023.01); H10B 12/00 (2023.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H10D 86/441 (2025.01); H10D 30/67 (2025.01); H10D 30/6744 (2025.01); H10D 30/6745 (2025.01); H10D 30/6746 (2025.01); H10D 30/6757 (2025.01); H10D 86/421 (2025.01); H10D 86/471 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01); H10H 29/142 (2025.01); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/124 (2023.02); G02F 1/1362 (2013.01); H10B 12/30 (2023.02); H10K 59/131 (2023.02);
Abstract
An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.