The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Aug. 04, 2021
Applicant:
Halo Microelectronics International, Campbell, CA (US);
Inventors:
Lijie Zhao, San Jose, CA (US);
Kenneth Chung-Yin Kwok, Irvine, CA (US);
Suming Lai, San Diego, CA (US);
Zhao Fang, Plano, TX (US);
Assignee:
Halo Microelectronics International, Campbell, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/90 (2025.01); H03K 17/0814 (2006.01); H10D 8/01 (2025.01); H10D 8/60 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/40 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 84/991 (2025.01); H03K 17/0814 (2013.01); H10D 8/051 (2025.01); H10D 8/60 (2025.01); H10D 84/0109 (2025.01); H10D 84/038 (2025.01); H10D 84/403 (2025.01); H10D 84/854 (2025.01);
Abstract
An apparatus includes a first drain/source region and a second drain/source region surrounded by an isolation ring formed over a substrate, the isolation ring formed being configured to be floating, and a first diode connected between the substrate and the isolation ring, wherein the first diode is a Schottky diode.