The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Nov. 29, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate including an N-stack cell, a buffer cell and an M-stack cell that are on the substrate, the buffer cell being between the N-stack and M-stack cells, an active pattern extending from the N-stack cell to the M-stack cell via the buffer cell, an N-stack channel pattern on the active pattern of the N-stack cell, an M-stack channel pattern on the active pattern of the M-stack cell, a dummy channel pattern on the active pattern of the buffer cell, an N-stack epitaxial pattern between the N-stack channel pattern and the dummy channel pattern, and an M-stack epitaxial pattern between the M-stack channel pattern and the dummy channel pattern. The N-stack channel pattern includes stacked N semiconductor patterns. The M-stack channel pattern includes stacked M semiconductor patterns. Each of N and M is an integer number of 2 or more, and M is greater than N.