The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Feb. 25, 2021
Applicant:
Hitachi Energy Ltd, Zürich, CH;
Inventors:
Assignee:
Hitachi Energy Switzerland AG, Baden, CH;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/68 (2025.01); H10D 62/83 (2025.01); H10D 62/832 (2025.01); H10D 62/85 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01); H10D 62/80 (2025.01);
U.S. Cl.
CPC ...
H10D 64/685 (2025.01); H10D 62/8325 (2025.01); H10D 64/01 (2025.01); H10D 64/514 (2025.01); H10D 64/693 (2025.01); H10D 62/80 (2025.01); H10D 62/8303 (2025.01); H10D 62/8503 (2025.01);
Abstract
An insulated gate structure includes a wide bandgap material layer having a channel region of a first conductivity type. A gate insulating layer is arranged directly on the channel region and has a first nitride layer that is arranged directly on the channel region. The gate insulating layer has a concentration of carbon atoms that is less than 10atoms/cmat a distance of 3 nm from an interface between the wide bandgap material layer and the first nitride layer. An electrically conductive gate electrode layer overlies the gate insulating layer so that the gate electrode layer is separated from the wide bandgap material layer by the gate insulating layer.