The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
May. 20, 2025
Applicant:
Nuvoton Technology Corporation Japan, Kyoto, JP;
Inventors:
Eiichi Hirai, Kyoto, JP;
Tsubasa Inoue, Kyoto, JP;
Hironao Nakamura, Kyoto, JP;
Yusuke Ito, Kyoto, JP;
Assignee:
NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/00 (2025.01); H10D 30/63 (2025.01); H10D 62/10 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 64/2527 (2025.01); H10D 30/63 (2025.01); H10D 62/126 (2025.01); H10D 64/518 (2025.01); H10D 84/837 (2025.01);
Abstract
A semiconductor device has a shape of a rectangular in which the side length in a first direction is greater than or equal to the side length in a second direction in a plan view, and includes 2n+1 obround first source pads of a first vertical MOS transistor that are arranged in stripes at positions within a first area and extend in the second direction and 2n+1 obround second source pads of a second vertical MOS transistor that are arranged in stripes at positions within a second area and extend in the second direction.