The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Jan. 10, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Koji Yoshitsugu, Tokyo, JP;
Eiji Yagyu, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a nitride semiconductor laminated structure formed on a substrate, a source electrode formed on the nitride semiconductor laminated structure, a drain electrode and a gate electrode, and a surface protection film covering the nitride semiconductor laminated structure. the nitride semiconductor laminated structure includes: a first nitride semiconductor layer formed on the substrate; and a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a composition different from the first nitride semiconductor layer. The surface protection film includes: a first insulating film formed to have contact with the gate electrode; and a second insulating film formed adjacent to the first insulating film and having a higher carbon concentration than the first insulating film.