The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Jun. 30, 2022
Applicant:

Toyota Jidosha Kabushiki Kaisha, Toyota, JP;

Inventors:

Katsunori Danno, Obu, JP;

Tetsuya Shoji, Susono, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H01L 21/383 (2006.01); H01L 21/425 (2006.01); H10D 62/80 (2025.01); H10D 8/60 (2025.01);
U.S. Cl.
CPC ...
H10D 62/102 (2025.01); H01L 21/383 (2013.01); H01L 21/425 (2013.01); H10D 62/80 (2025.01); H10D 8/60 (2025.01);
Abstract

The present disclosure relates to a semiconductor device including an n-type gallium oxide semiconductor layer that has a center region and a peripheral region having a lower donor density than the center region, an electrode layer that is laminated on the n-type gallium oxide semiconductor layer, and forms Schottky junction with the n-type gallium oxide semiconductor layer in the center region as viewed from a lamination direction, and a first p-type nickel oxide semiconductor layer that is laminated on the n-type gallium oxide semiconductor layer such that the first p-type nickel oxide semiconductor layer is partially positioned between the n-type gallium oxide semiconductor layer and the electrode layer, and has an outer peripheral end portion on a peripheral region side in the peripheral region as viewed from the lamination direction.


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