The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Feb. 22, 2023
Denso Corporation, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device has a cell portion and a peripheral portion. The cell portion includes a semiconductor substrate, a first impurity region, a second impurity region, and a contact region for the second impurity region. The semiconductor substrate has a drift layer. The first impurity region is on the drift layer. The second impurity region is on a surface layer portion of the first impurity region. A length of the cell portion is identical to a length of the second impurity region in one direction. The contact region extends from the cell portion to the peripheral portion. A length of a section of the contact region at the peripheral section in the one direction is defined as a protruding length, and a length of the second impurity region is defined as a second-impurity-region length. A ratio of the protruding length to the second-impurity-region length is 0.1 or smaller.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile