The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Dec. 20, 2019
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Hajime Okuda, Kyoto, JP;

Yoshinori Fukuda, Kyoto, JP;

Toru Takuma, Kyoto, JP;

Shuntaro Takahashi, Kyoto, JP;

Naoki Takahashi, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H01L 21/76 (2006.01); H10D 12/00 (2025.01); H10D 62/17 (2025.01); H10D 64/27 (2025.01); H10D 30/65 (2025.01); H10D 30/69 (2025.01); H10D 62/13 (2025.01); H10D 88/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/668 (2025.01); H01L 21/76 (2013.01); H10D 12/481 (2025.01); H10D 62/393 (2025.01); H10D 64/519 (2025.01); H10D 30/658 (2025.01); H10D 30/699 (2025.01); H10D 62/157 (2025.01); H10D 64/512 (2025.01); H10D 64/513 (2025.01); H10D 88/00 (2025.01); H10D 88/101 (2025.01);
Abstract

A semiconductor device includes a semiconductor layer, an insulation gate-type first transistor which is formed in the semiconductor layer, an insulation gate-type second transistor which is formed in the semiconductor layer, and a control wiring which is formed on the semiconductor layer such as to be electrically connected to the first transistor and the second transistor, and transmits control signals that control the first transistor and the second transistor to be in ON states in a normal operation and that control the first transistor to be in an OFF state and the second transistor to be in an ON state in an active clamp operation.


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