The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Jan. 18, 2023
Applicant:
Episil Technologies Inc., Hsinchu County, TW;
Inventors:
Yuan Liang Liu, Hsinchu County, TW;
Yi Chen Lee, Hsinchu County, TW;
Yen Chang Chen, Hsinchu County, TW;
Assignee:
EPISIL TECHNOLOGIES INC., Hsinchu Country, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/01 (2025.01); H10D 30/66 (2025.01); H10D 62/832 (2025.01); H10D 64/23 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 30/665 (2025.01); H10D 12/031 (2025.01); H10D 62/8325 (2025.01); H10D 64/256 (2025.01); H10D 62/106 (2025.01);
Abstract
A semiconductor device comprises: a SiC epitaxial layer and a first recess. The SiC epitaxial layer has: a p-type well region; a heavily doped n-type region on a surface of the p-type well region; and a heavily doped p-type region below the heavily doped n-type region and within the p-type well region. The first recess is formed in the heavily doped p-type region and the heavily doped n-type region, wherein a depth of the first recess exceeds a depth of the heavily doped n-type region.