The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Dec. 15, 2022
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Yasuhiro Yoshiura, Tokyo, JP;

Eiko Otsuki, Tokyo, JP;

Hayato Okamoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/665 (2025.01); H10D 62/105 (2025.01); H10D 64/111 (2025.01);
Abstract

According to the present disclosure, a semiconductor device includes a semiconductor substrate of a first conductivity type, in which a cell region, a ballast resistor region, and a termination region surrounding the ballast resistor region are defined, a first insulating film arranged on a front surface of the semiconductor substrate, having a first opening in the cell region, and having at least one second opening in the ballast resistor region, a second insulating film filled in the at least one second opening, a first impurity layer of a second conductivity type arranged on the front surface of the semiconductor substrate below the first opening, and a second impurity layer of the second conductivity type arranged on the front surface of the semiconductor substrate below the at least one second opening, a conductive film arranged from the front surface of the first opening of the semiconductor substrate to the termination region.


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