The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Jan. 25, 2022
Applicant:

Denso Corporation, Kariya, JP;

Inventors:

Satoshi Kuwano, Toyota, JP;

Tsuyoshi Nishiwaki, Toyota, JP;

Yuta Furumura, Toyota, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 8/00 (2025.01); H10D 12/01 (2025.01); H10D 62/17 (2025.01); H10D 84/60 (2025.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); H10D 8/422 (2025.01); H10D 12/038 (2025.01); H10D 62/393 (2025.01); H10D 84/617 (2025.01);
Abstract

A semiconductor device includes: a semiconductor substrate; a trench gate portion on the semiconductor substrate; a surface electrode covering an upper side of the semiconductor substrate; and an interlayer insulating film insulating the trench gate portion from the surface electrode. The semiconductor substrate includes: a drift region; a body region above the drift region; a barrier region below at least a part of the body region; and a pillar region extending from the surface of the semiconductor substrate to the barrier region and in Schottky contact with the surface electrode. The interlayer insulating film has an acute angle between a top surface and a side surface thereof.


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