The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Aug. 27, 2021
Applicant:

Nuvoton Technology Corporation Japan, Kyoto, JP;

Inventors:

Atsushi Himeno, Osaka, JP;

Yukio Hayakawa, Kyoto, JP;

Koichi Kawashima, Kyoto, JP;

Ryutaro Yasuhara, Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/80 (2023.02); H10N 70/011 (2023.02); H10N 70/24 (2023.02);
Abstract

In a non-volatile storage device, a first lower-layer metal wire, a lower plug, a variable resistance element, an upper plug, and a first upper-layer metal wire are formed in that order from below in a storage region, and a second lower-layer metal wire, a first via, a middle-layer metal wire, a second via, and a second upper-layer metal wire are formed in that order from below in a circuit region. The first and second lower-layer metal wires are formed in the same layer, and the first and second upper-layer metal wires are formed on the same layer. Relative to a substrate, the variable resistance element and the middle-layer metal wire have top faces at different heights, bottom faces at different heights, or both top faces and bottom faces at different heights.


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