The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Jun. 20, 2023
Kioxia Corporation, Tokyo, JP;
Hyung-Woo Ahn, Seongnam-si, KR;
Young Min Eeh, Yokohama Kanagawa, JP;
Tadaaki Oikawa, Seoul, KR;
Taiga Isoda, Tokyo, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A magnetoresistance memory device includes a lower electrode, a barrier layer, a variable resistance layer, an upper electrode, and a first layer stack. The lower electrode contains one of amorphous carbon and amorphous carbon nitride. The barrier layer is provided on the lower electrode and contains one of tungsten nitride (WN) and silicon tungsten nitride (WSiN). The variable resistance layer is provided on the barrier layer and contains a variable resistance material. The upper electrode is provided on the variable resistance layer and contains one of amorphous carbon and amorphous carbon nitride. The first layer stack is provided on the upper electrode and includes a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer.