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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12426264 B1

PDFFull Text
Date of Patent:
Sep. 23, 2025

Filed:

Nov. 17, 2022

Semiconductor devices and data storage systems including the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jinwoo Lee, Suwon-si, KR;

Jooheon Kang, Seoul, KR;

Donggeon Gu, Hwaseong-si, KR;

Doyoon Kim, Hwaseong-si, KR;

Yumin Kim, Seoul, KR;

Suseong Noh, Suwon-si, KR;

Changyup Park, Hwaseong-si, KR;

Hyunjae Song, Hwaseong-si, KR;

Dongho Ahn, Hwaseong-si, KR;

Myunghun Woo, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Christopher A Johnson

Int. Cl.
CPC ...
H10B 53/40 (2023.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02);
Abstract

A semiconductor device includes a lower structure, a stack structure including gate layers and interlayer insulating layers alternately stacked on the lower structure in a first direction, and a channel structure in a channel hole passing through the stack structure. The channel structure includes a variable resistance material layer in the channel hole, a data storage material layer between the variable resistance material layer and a sidewall of the channel hole, and a channel layer between the data storage material layer and the sidewall of the channel hole, the channel layer includes a first element, the variable resistance material layer includes a second element, different from the first element, oxygen, and oxygen vacancies, and the data storage material layer includes the first element, the second element, oxygen, and oxygen vacancies.

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