The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

May. 18, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sungmin Hwang, Hwaseong-si, KR;

Jaejoo Shim, Suwon-si, KR;

Bongtae Park, Seoul, KR;

Taechul Jung, Hwaseong-si, KR;

Jongyoon Choi, Seongnam-si, KR;

Assignee:
Attorneys:

Samsung Electronics Co., Ltd.

JOHN WELCH

EDWARD GATES

JASON HONEYMAN

EDMUND WALSH

JAMES MORRIS

RANDY PRITZKER

RICHARD GIUNTA

TIMOTHY OYER

DOUGLAS WOLF

ROBERT MALDONADO

NEIL FERRARO

JAMES HANIFIN

ROBERT HUNT

HELEN LOCKHART

JOHN VAN AMSTERDAM

STEPHEN RABINOWITZ

PATRICK WALLER

SCOTT A MCKEOWN

EDWARD RUSSAVAGE

ADAM WICHMAN

MICHAEL POMIANEK

ROBERT WALAT

CHARLES BAKER

MARIA TREVISAN

ANDREW WILLIAMS

GERALD HRYCYSZYN

JENNIFER BUSH

MICHAEL RADER

JANICE VATLAND

TANI CHEN

MATTHEW GRADY

MELISSA BEEDE

ROQUE EL HAYEK

GREGORY NIEBERG

TONIA SAYOUR

GABRIEL MCCOOL

MICHAEL S PARSONS

NIDHI MALLA

JONATHAN ROSES

ROBERT JENSEN

JESSAMINE LEE

GEORGE T SCOTT

DANIEL YOUNG

ZACHARY PICCOLOMINI

THOMAS FRANKLIN

MARC JOHANNES

ROBERT SAHR

HEATHER DIPIETRANTONIO

VICTOR CHEUNG

BRANDON BLACKWELL

JASON BALICH

JOHN HARMON

ELISABETH HUNT

OONA JOHNSTONE

JENNIFER WANG

WILLIAM ZHANG

CARA DAWSON

DANIEL RUDOY

MARK J CONSILVIO

DAVID GESNER

LAURA ROGERS

MATTHEW DUFFEY

ZHIYUN GE

CURTIS POWELL

JIE XIANG

LIN LI

KEVIN MACDONALD

PHILIP HAMZIK

DIANA BORGAS

ANANT SARASWAT

ADAM ZEIGER

ELIZABETH BOEHM

WILLIAM L CZAPLYSKI

MICHELE MORESCO

DANIELLE C SAMBLANET

AMANDA VARRICHIONE

JESSICA VON REYN

NATHAN JACOBS

ANNE WEEKS

LINGYIN GE

SAAD ALAM

JOSEPH BOWLER

ELIZABETH MULSKI

HARRISON E SHECTER

ANDREW VARRENTI

FLORA LUO

SARAH C C SCHLOTTER

EVAN C JONES

ANDREW G MAHER

TYLER GODDARD

ROSHAN J PLAMTHOTTAM

CHARLOTTE STEWART-SLOAN

SHANGXING LU

SAMUEL L DOSKOCIL

JOHN C HOVESTADT

JOHN A OTTERBEIN

ANDREW MATHIS

COLIN BUSS

STEVEN HANNIGAN

EDWARD STANTON

KEVIN B CHANCELLOR

SAMUEL S KIM

WILLIAM LINDEMANN

CLAIRE LIDSTON

KYLEE A PROSSER

VICTORIA JULIAN

JILL L RYAN

CONOR J KAVANAGH

JOSEPH M NOREIKA

BENJAMIN J WALSH

ANDREW P SCHLAUS

ALLISON E MAYNE

EVAN S BENDER

ADRIENNE ZAGIEBOYLO

MAX D ZEGERS

SAMANTHA C COLLINS

KAREN GUADALUPE CRUZ

Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/10 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/10 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

Semiconductor device includes a substrate, gate electrodes stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the substrate, separation regions penetrating the gate electrodes, extending in a second direction perpendicular to the first direction, and spaced apart from each other in a third direction perpendicular to the first direction and the second direction, channel structures arranged in columns in the third direction and rows in the second direction and penetrating the gate electrodes between the separation regions, and bit lines extending in the third direction on the channel structures. The channel structures include a first group of channel structures repeatedly arranged and including three columns arranged with a first pitch and a second pitch smaller than the first pitch in order, and the bit lines are arranged with at least one pitch smaller than the second pitch in the second direction.


Find Patent Forward Citations

Loading…