The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Jan. 23, 2024
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sohyeon Bae, Seoul, KR;
Wonchul Lee, Seongnam-si, KR;
Jaehyun Kim, Cheonan-si, KR;
Jaehyuk Jang, Hwaseong-si, KR;
Hyebin Choi, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of manufacturing a semiconductor device including partially etching an upper portion of a substrate to form a recess extending in a first direction parallel to an upper surface of the substrate, forming a gate structure in the recess, the gate structure including a first conductive pattern, a second conductive pattern on the first conductive pattern, and a gate mask on the second conductive pattern, partially etching an end portion of the gate structure in the first direction to form an opening, the opening extending through end portions of the gate mask and the second conductive pattern of the gate structure to expose a portion of the first conductive pattern, and a bottom of the opening being lower than a lower surface of the exposed portion of the first conductive pattern, and forming a contact plug in the opening.