The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

May. 03, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Eunjung Kim, Daegu, KR;

Hyo-Sub Kim, Seoul, KR;

Jay-Bok Choi, Yongin-si, KR;

Yongseok Ahn, Seoul, KR;

Junhyeok Ahn, Suwon-si, KR;

Kiseok Lee, Hwaseong-si, KR;

Myeong-Dong Lee, Seoul, KR;

Yoonyoung Choi, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/485 (2023.02);
Abstract

A semiconductor memory device includes a device isolation pattern on a substrate and defining a first active section, a first storage node pad on the first active section, a word line in the substrate and extending across the first active section, a bit line on the first storage node pad and crossing over the word line, a storage node contact on one side of the bit line and adjacent to the first storage node pad, and an ohmic layer between the storage node contact and the first storage node pad. A bottom surface of the ohmic layer is rounded.


Find Patent Forward Citations

Loading…