The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Dec. 21, 2023
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Amit Mittra, Irvine, CA (US);

Kevin Johnson, Kildeer, IL (US);

Hiroaki Ebihara, San Jose, CA (US);

Kenny Geng, Mountain View, CA (US);

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/46 (2023.01); H04N 25/77 (2023.01); H04N 25/78 (2023.01);
U.S. Cl.
CPC ...
H04N 25/46 (2023.01); H04N 25/77 (2023.01); H04N 25/78 (2023.01);
Abstract

A pixel includes a photosensor configured to photogenerate charge in response to incident light. A floating diffusion is configured to receive the charge photogenerated by the photosensor. A transfer transistor is coupled between the floating diffusion and the photosensor. A dual floating diffusion (DFD) transistor is coupled to the floating diffusion. A binning node is coupled to the DFD transistor. A floating diffusion interconnect grid is coupled to the binning node of the pixel and a binning node of a second pixel. The pixel and the second pixel are included in a pixel array. The DFD transistor is configured to couple the binning node to the floating diffusion when activated during a readout operation of the pixel array to provide a binned readout, and the DFD transistor is configured not to couple the binning node to the floating diffusion when deactivated to provide a full resolution readout.


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