The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Feb. 09, 2023
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Taketo Nishiyama, Tokyo, JP;
Hiroki Hidaka, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/082 (2006.01);
U.S. Cl.
CPC ...
H03K 17/0828 (2013.01);
Abstract
A technique disclosed in the specification of the present application is a technique for increasing a degree of freedom of an IGBT in a device, and as a result, achieving downsizing of the device. A semiconductor device relating to a technique disclosed in the specification of the present application includes a plurality of IGBTs connected in series on a power source line in which bus current flows and a MOSFET connected to the plurality of IGBTs in series. The bus current flows via a drain terminal and a source terminal of the MOSFET.