The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Oct. 13, 2022
Applicant:
Visual Photonics Epitaxy Co., Ltd., Taoyuan, TW;
Inventors:
Van-Truoung Dai, Vinhphuc Province, VN;
Yu-Chung Chin, Taoyuan, TW;
Chao-Hsing Huang, Taoyuan, TW;
Van-Chien Nguyen, Hai phong, VN;
Assignee:
VISUAL PHOTONICS EXPITAXY CO., LTD, Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/042 (2006.01); H01S 5/065 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18394 (2013.01); H01S 5/04256 (2019.08); H01S 5/0653 (2013.01); H01S 5/18311 (2013.01); H01S 5/1833 (2013.01); H01S 5/18341 (2013.01);
Abstract
Provided is a vertical-cavity surface-emitting semiconductor laser diode, including a substrate and an epitaxial stack structure disposed on the substrate. The epitaxial stack structure includes an active region, a current confinement layer and a mode filter layer. The mode filter layer includes an optical aperture, and the mode filter layer is able to be oxidized. Accordingly, the optical aperture of the mode filter layer is formed by oxidizing the mode filter layer.