The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Feb. 24, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventors:
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); G11C 5/06 (2006.01); H01L 23/552 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); G11C 5/063 (2013.01); H01L 23/5283 (2013.01); H10B 12/482 (2023.02); H10B 12/488 (2023.02);
Abstract
A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a substrate having a surface, a first signal line disposed on the surface of the substrate, and a second signal line disposed on the surface of the substrate and spaced apart from the first signal line. The semiconductor device also includes a first shielding line between the first signal line and the second signal line. The minimum distance between the first signal line and the second signal line is equal to or less than about 90 nanometers (nm).