The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Sep. 24, 2021
Nanya Technology Corporation, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A method of manufacturing a semiconductor structure includes a number of operations. A first oxide layer is provided on a semiconductor integrated circuit. A conductive layer of the semiconductor integrated circuit is exposed from a top surface of the first oxide layer. An etch stop layer is formed on the top surface of the first oxide layer. A second oxide layer is formed on the etch stop layer. A through via is formed extending through the second oxide layer and the etch stop layer to expose the conductive layer. Acid is provided on the conductive layer to form a protective layer on the conductive layer. The protective layer includes a compound of the acid and material of the conductive layer. A fence of the second oxide layer at an edge on the through via is removed at the through via by a hydrofluoric acid etching.