The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Feb. 28, 2022
Qualcomm Incorporated, San Diego, CA (US);
Jonghae Kim, San Diego, CA (US);
Je-Hsiung Lan, San Diego, CA (US);
Kai Liu, Phoenix, AZ (US);
Ranadeep Dutta, Del Mar, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
An integrated circuit (IC) includes a substrate and a first through substrate via (TSV) in the substrate. The first TSV includes a first metal-insulator-metal (MIM) capacitor. The first MIM capacitor includes a first plate composed of a first metallization layer on an inner surface of the first TSV. The first MIM capacitor includes a MIM insulator layer on the first plate. The first MIM capacitor includes a second plate composed of a second metallization layer on the MIM insulator layer. The IC includes a 3D inductor. The 3D inductor includes a second TSV in the substrate. The 3D inductor includes a first trace on a first surface of the substrate, coupled to a first end of the second TSV. The 3D inductor further includes a second trace on a second surface of the substrate and coupled to a second end of the second TSV and a second end of the first TSV.