The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Feb. 07, 2022
Applicant:

Helios Bioelectronics Inc., Zhubei, TW;

Inventors:

Cheng-Che Lee, Zhubei, TW;

Lin-Chien Chen, Zhubei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01L 21/02603 (2013.01); H01L 21/265 (2013.01); H01L 21/308 (2013.01); H01L 21/31144 (2013.01); H10D 62/119 (2025.01);
Abstract

The present disclosure provides a semiconductor sensing device. The semiconductor sensing device includes a substrate having a sensing region. The sensing region includes an active feature. The active feature includes an anchor portion, an elevated portion, and a nanowire portion. The anchor portion is on a top surface of the substrate. The elevated portion is spaced from the top surface of the substrate by a vertical distance and connected to the anchor portion. The nanowire portion is on the top surface of the substrate and connected to the anchor portion. The vertical distance is greater than or equal to a thickness of the nanowire portion.


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