The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Apr. 01, 2021
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventor:
Shoji Akiyama, Annaka, JP;
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 29/30 (2006.01); H01L 21/225 (2006.01); H01L 21/304 (2006.01); H01L 21/762 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02123 (2013.01); H01L 21/02255 (2013.01); H01L 21/02439 (2013.01); H01L 21/2253 (2013.01); H01L 21/304 (2013.01); H01L 21/76262 (2013.01); H01L 24/05 (2013.01); C30B 29/30 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2924/1068 (2013.01);
Abstract
Provided are a composite substrate in which a wafer to be bonded has a sufficiently small surface roughness and which can be prevented from causing film peeling, and a method for producing the composite substrate. The composite substrateof the present invention has a silicon wafer, an interlayer, and a single-crystal silicon thin film or oxide single-crystal thin filmstacked in the order listed and has a damaged layerin a portion of the silicon waferon the side of the interlayer