The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Jul. 07, 2022
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventors:

Takeshi Kagawa, Nagaokakyo, JP;

Masatomi Harada, Nagaokakyo, JP;

Hiroshi Matsubara, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/33 (2006.01); H01G 4/10 (2006.01); H01G 4/12 (2006.01); H01G 4/252 (2006.01); H01G 4/30 (2006.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H01G 4/33 (2013.01); H01G 4/10 (2013.01); H01G 4/1209 (2013.01); H01G 4/1254 (2013.01); H01G 4/252 (2013.01); H01G 4/306 (2013.01); H10D 1/692 (2025.01);
Abstract

A semiconductor device includes a semiconductor substrate having first and second main surfaces that oppose each other in a thickness direction, and a circuit layer disposed on the first main surface. The circuit layer includes a first electrode layer on a side of the semiconductor substrate, a second electrode layer that faces the first electrode layer, a dielectric layer disposed between the electrode layers, and a first outer electrode electrically connected to the first electrode layer through an opening in the dielectric layer. An end portion of the dielectric layer on a side of the first region is in contact with the first electrode layer, and in the dielectric layer, a size of the end portion in the thickness direction is smaller than a size of an inter-electrode portion between the first and second electrode layers in the thickness direction.


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