The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Jul. 28, 2022
Applicant:

Ionq, Inc., College Park, MD (US);

Inventor:

Jason Madjdi Amini, Takoma Park, MD (US);

Assignee:

IonQ, Inc., College Park, MD (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G21K 1/00 (2006.01); G06N 10/60 (2022.01);
U.S. Cl.
CPC ...
G21K 1/00 (2013.01); G06N 10/60 (2022.01);
Abstract

Techniques for the fabrication of electrodes and the shaping of glass dies or substrates are described to produce metal-on-glass ion traps. These ion traps may be configured to have open light access and high aspect trenches for the electrodes. For example, the glass substrate may be shaped to provide high numerical aperture (NA) light access by having angled cutouts, electrode structures with high aspect trenches, angled wire bonds for electrical connections, the angled wire bonds providing additional clear access by one or more laser beams, or a combination of any of these features. A quantum information processing (QIP) system is also described that may include an ion trap having any of these features.


Find Patent Forward Citations

Loading…