The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Jul. 16, 2021
Soulbrain Co., Ltd., Gyeonggi-do, KR;
Chang Bong Yeon, Gyeonggi-do, KR;
Jin Hee Kim, Gyeonggi-do, KR;
Jae Sun Jung, Gyeonggi-do, KR;
Jong Moon Kim, Gyeonggi-do, KR;
Seung Hyun Lee, Gyeonggi-do, KR;
Seok Jong Lee, Gyeonggi-do, KR;
SOULBRAIN CO., LTD., Gyeonggi-do, KR;
Abstract
The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film using the growth inhibitor, and a semiconductor substrate fabricated by the method. More specifically, the growth inhibitor for forming a thin film of the present invention is a compound represented by Chemical Formula 1: AnBmXoYiZj. In Chemical Formula 1, A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X includes one or more of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.