The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Oct. 11, 2021
Applicant:
Samsung Display Co., Ltd., Yongin-si, KR;
Inventors:
Assignee:
Samsung Display Co., Ltd., Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/121 (2023.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10H 29/10 (2025.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); H10D 30/6734 (2025.01); H10D 30/6743 (2025.01); H10D 30/6755 (2025.01); H10D 30/6757 (2025.01);
Abstract
A transistor may include an active layer including a first end area, a middle area adjacent to the first end area, and a second end area spaced from the first end area by the middle area, a first electrode on the active layer, overlapping the first end area, and connected to the first end area through a first contact hole, an upper gate electrode on the active layer, overlapping the middle area, at a same layer as the first electrode, and to receive a gate signal and a lower gate electrode under the active layer, overlapping the first contact hole and the middle area, and to receive the gate signal.