The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
May. 09, 2022
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Takeyoshi Watabe, Kanagawa, JP;
Hiromi Seo, Kanagawa, JP;
Airi Ueda, Kanagawa, JP;
Yuta Kawano, Kanagawa, JP;
Tomohiro Kubota, Kanagawa, JP;
Yasushi Kitano, Kanagawa, JP;
Takao Tosu, Kanagawa, JP;
Nobuharu Ohsawa, Kanagawa, JP;
Satoshi Seo, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
An organic semiconductor device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-transport layer and alight-emitting layer. The hole-transport layer is positioned between the anode and the light-emitting layer. The hole-transport layer is not in contact with the anode. The hole-transport layer includes a transport layer material for a light-emitting device and the GSP_slope that is a potential gradient of a surface potential of an evaporated film of the material is higher than or equal to 20 (mV/nm).