The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Dec. 28, 2022
Epistar Corporation, Hsinchu, TW;
Chao-Hsing Chen, Hsinchu, TW;
Meng-Hsiang Hong, Hsinchu, TW;
Chi-Shiang Hsu, Hsinchu, TW;
Yen-Liang Kuo, Hsinchu, TW;
Chien-Ya Hung, Hsinchu, TW;
Yong-Yang Chen, Hsinchu, TW;
Yu-Ling Lin, Hsinchu, TW;
Xue-Cheng Yao, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A light-emitting device includes a semiconductor stack, first and second insulative layers, a reflective conductive structure, and first and second pads. The semiconductor stack includes a first semiconductor layer, and a mesa having an active region having a second semiconductor layer and formed on the first semiconductor layer. The first insulative layer is formed on the semiconductor stack and has first openings. The reflective conductive structure is formed on the first insulative layer and is electrically connected to the second semiconductor layer through the first openings. The second insulative layer is formed on the reflective conductive structure and includes second openings and a contact area covering portions overlapped with the first and second openings. A first pad is formed on the second insulative layer and electrically connected to the first semiconductor layer. A second pad formed on the second insulative layer and electrically connected to the second semiconductor layer.