The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2025

Filed:

Oct. 27, 2022
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventor:

Hui Zang, San Jose, CA (US);

Assignee:

OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/807 (2025.01); H10F 39/014 (2025.01); H10F 39/182 (2025.01); H10F 39/80373 (2025.01);
Abstract

A pixel for an image sensor is described. The pixel comprises a photodiode and an isolation structure disposed within a semiconductor substrate and between a first and second side of the semiconductor substrate. The isolation structure includes a bottom sidewall coupled to a first sidewall and a second sidewall of the isolation structure. The isolation structure is disposed, at least in part, between a gate electrode and the second side of the semiconductor substrate. A first implant region of the semiconductor substrate is disposed proximate to the first sidewall of the isolation structure. The first implant region is disposed between the photodiode and the first sidewall. A first dopant concentration of the first implant region is greater than a bulk dopant concentration of the semiconductor substrate.


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