The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Feb. 19, 2021
Tower Partners Semiconductor Co., Ltd., Uozu, JP;
Tower Semiconductor Ltd., Migdal Haemek, IL;
Masahiro Oda, Hyogo, JP;
Hiroki Takahashi, Osaka, JP;
Hiroyuki Doi, Kyoto, JP;
Hirohisa Otsuki, Hyogo, JP;
TOWER PARTNERS SEMICONDUCTOR CO., LTD., Uozu, JP;
TOWER SEMICONDUCTOR LTD., Migdal Haemek, IL;
Abstract
A solid-state imaging device includes an N-type semiconductor layer, an element layer including a photoelectric conversion element and an active element, an interconnect layer providing an interconnect for the active element, and an element isolation trench penetrating the semiconductor layer. The element layer includes a P-type region and an N-type region. A first hole storage layer is formed on a surface of the semiconductor layer on a side opposite to the element layer. A second hole storage layer is formed in contact portions of the semiconductor layer and the element layer with the element isolation trench. The P-type region of the element layer and the first hole storage layer are connected to each other by the second hole storage layer.