The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2025
Filed:
Nov. 23, 2022
Auo Corporation, Hsinchu, TW;
Chen-Shuo Huang, Hsinchu, TW;
AUO Corporation, Hsinchu, TW;
Abstract
A semiconductor device and its manufacturing method are provided. The semiconductor device includes a substrate, an oxygen-containing protrusive structure disposed above the substrate, a metal oxide layer, a gate dielectric layer disposed on the metal oxide layer, and a gate disposed on the gate dielectric layer. The oxygen-containing protrusive structure has a first surface, a second surface opposite to the first surface, and sidewalls connected to the first and second surfaces. The metal oxide layer includes first, second, and third portions. The first portion covers the first surface. The second portion is connected to the first portion and covers the sidewalls of the oxygen-containing protrusive structure. A resistivity of the second portion gradually decreases away from the first portion. The third portion is connected to the second portion and extends from the sidewalls of the oxygen-containing protrusive structure in a direction away from the oxygen-containing protrusive structure.